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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12P10/D Designer'sTM Data Sheet Power Field Effect Transistor This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. * Silicon Gate for Fast Switching Speeds -- Switching Times Specified at 100C * Designer's Data -- IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature * Rugged -- SOA is Power Dissipation Limited * Source-to-Drain Diode Characterized for Use With Inductive Loads MTP12P10 TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM P-Channel Enhancement-Mode Silicon Gate (R) D G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-repetitive (tp 50 s) Drain Current -- Continuous Drain Current -- Pulsed Total Power Dissipation Derate above 25C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 100 100 20 40 12 28 75 0.6 - 65 to 150 Unit Vdc Vdc Vdc Vpk Adc Watts W/C C THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds RJC RJA TL 1.67 62.5 260 C/W C Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Designer's is a trademark of Motorola, Inc. REV 1 (c) Motorola TMOS Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MTP12P10 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain Current (VDS = Rated VDSS, VGS = 0) (VDS = Rated VDSS, VGS = 0, TJ = 125C) Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) TJ = 100C Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 6.0 Adc) Drain-Source On-Voltage (VGS = 10 V) (ID = 12 Adc) (ID = 6.0 Adc, TJ = 100C) Forward Transconductance (VDS = 15 V, ID = 6.0 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS* (TJ = 100C) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 0.8 Rated VDSS, ID = Rated ID, VGS = 10 V) See Figure 11 (VDD = 25 V, ID = 0.5 Rated ID, RG = 50 ) See Figures 12 and 13 td(on) tr td(off) tf Qg Qgs Qgd -- -- -- -- 33 (Typ) 16 (Typ) 17 (Typ) 50 150 150 150 50 -- -- nC ns (VDS = 25 V, VGS = 0, f = 1.0 MHz) See Figure 10 Ciss Coss Crss -- -- -- 920 575 200 pF VGS(th) RDS(on) VDS(on) -- -- gFS 2.0 4.2 3.8 -- mhos 2.0 1.5 -- 4.5 4.0 0.3 Vdc Ohm Vdc V(BR)DSS IDSS -- -- IGSSF IGSSR -- -- 10 100 100 100 nAdc nAdc 100 -- Vdc Adc Symbol Min Max Unit SOURCE-DRAIN DIODE CHARACTERISTICS* Forward On-Voltage Forward Turn-On Time Reverse Recovery Time INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance (Measured from the contact screw on the header closer to the source pin and the center of the die) Internal Source Inductance (Measured from the source pin, 0.25 from the package to the source bond pad) INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) * Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Ld 3.5 (Typ) 4.5 (Typ) Ls 7.5 (Typ) -- -- -- nH Ld 5.0 (Typ) -- nH (IS = Rated ID, VGS = 0) VSD ton trr 4.0 (Typ) 5.5 Vdc Limited by stray inductance 300 (Typ) -- ns Ls 12.5 (Typ) -- 2 Motorola TMOS Power MOSFET Transistor Device Data MTP12P10 TYPICAL ELECTRICAL CHARACTERISTICS VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) 20 18 -I D, DRAIN CURRENT (AMPS) 16 14 12 10 8 6 4 2 0 0 1 VGS = -20 V TJ = 25C 1.2 VDS = VGS ID = 1 mA 10 V 1.1 8V 7V 1 0.9 6V 5V 0.8 2 3 4 5 6 7 8 9 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (C) 125 150 Figure 1. On-Region Characteristics VBR(DSS), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Figure 2. Gate-Threshold Voltage Variation With Temperature 20 25C TJ = -55C 2 VGS = 0 ID = 0.25 mA I D, DRAIN CURRENT (AMPS) 16 1.6 100C 12 1.2 8 VDS = 20 V 0.8 4 0.4 0 0 8 12 16 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 20 0 -50 -75 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Normalized Breakdown Voltage versus Temperature RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) VGS = 15 V 0.4 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 0.5 TJ = 100C 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 VGS = 10 V ID = 6 A 0.3 25C 0.2 -55C 0.1 0 0 4 8 12 16 20 24 28 32 36 40 ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation With Temperature Motorola TMOS Power MOSFET Transistor Device Data 3 MTP12P10 SAFE OPERATING AREA INFORMATION 50 10 s I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1 ms 10 ms VGS = 20 V SINGLE PULSE TC = 25C 1 dc 0.1 ms 40 10 30 20 MTM/MTP12P06 MTM/MTP12P06 RDS(on) LIMIT PACKAGE LIMIT THERMAL LIMIT MTM/MTP12P10 10 1 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10 0 0 10 MTM/MTP12P10 30 50 70 20 40 60 80 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 90 100 Figure 7. Maximum Rated Forward Biased Safe Operating Area Figure 8. Maximum Rated Switching Safe Operating Area FORWARD BIASED SAFE OPERATING AREA The FBSOA curves define the maximum drain-to-source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limitations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on a case temperature of 25C and a maximum junction temperature of 150C. Limitations for repetitive pulses at various case temperatures can be determined by using the thermal response curves. Motorola Application Note, AN569, "Transient Thermal Resistance-General Data and Its Use" provides detailed instructions. SWITCHING SAFE OPERATING AREA The switching safe operating area (SOA) of Figure 8 is the boundary that the load line may traverse without incurring damage to the MOSFET. The fundamental limits are the peak current, IDM and the breakdown voltage, V(BR)DSS. The switching SOA shown in Figure 8 is applicable for both turn- on and turn-off of the devices for switching times less than one microsecond. The power averaged over a complete switching cycle must be less than: TJ(max) - TC RJC 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.03 0.02 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 0.01 0.02 t2 DUTY CYCLE, D = t1/t2 2 5 t, TIME (ms) 10 20 t1 P(pk) RJC(t) = r(t) RJC RJC = 1.67C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 50 100 200 500 1000 D = 0.5 0.2 Figure 9. Thermal Response 4 Motorola TMOS Power MOSFET Transistor Device Data MTP12P10 1600 VGS, GATE SOURCE VOLTAGE (VOLTS) TC = 25C VGS = 0 f = 1 MHz Ciss 800 Coss Crss 0 0 20 VDS, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 10 30 40 0 -2 -4 -6 -8 -10 -12 -14 -16 80 V 0 5 10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) VDS = 30 V 50 V TJ = 25C ID = 12 A C, CAPACITANCE (pF) 1200 400 Figure 10. Capacitance Variation Figure 11. Gate Charge versus Gate-To-Source Voltage RESISTIVE SWITCHING VDD ton RL Vout Vin PULSE GENERATOR Rgen 50 z = 50 50 INPUT, Vin 50% 10% PULSE WIDTH DUT OUTPUT, Vout td(on) tr 90% td(off) toff tf 90% 10% 90% 50% INVERTED Figure 12. Switching Test Circuit Figure 13. Switching Waveforms Motorola TMOS Power MOSFET Transistor Device Data 5 MTP12P10 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN H Z L V G D N R J CASE 221A-06 ISSUE Y Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola TMOS Power MOSFET Transistor Device Data MTP12P10/D *MTP12P10/D* |
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